Visible photoluminescence from porous GaAs

Download
  1. Get@NRC: Visible photoluminescence from porous GaAs (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1063/1.117050
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleApplied Physics Letters
Volume69
Issue11
Pages16201622; # of pages: 3
SubjectELECTROCHEMISTRY; GALLIUM ARSENIDES; N - TYPE CONDUCTORS; PHOTOLUMINESCENCE; POROUS MATERIALS; SEM
AbstractPorous GaAs was formed electrochemically on n-type GaAs(100) in a 0.1 M HCl electrolyte. Scanning electron microscopy revealed feature sizes of the porous structure in the micrometer to nanometer range. The optical properties of the porous material were characterized by photoluminescence (PL) measurements at 295 K. Compared with untreated GaAs, a shift down of the ``infrared'' PL maximum to ~ 840 nm can be observed. An additional ``green'' PL peak occurs at ~ 540 nm that in some samples is readily visible to the naked eye. The ``green'' and the ``infrared'' PL are ascribed to quantum confinement effects in GaAs nano- and microcrystallites, respectively.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12336512
Export citationExport as RIS
Report a correctionReport a correction
Record identifierb57e9c71-1e65-450e-90c2-5e68999b0adc
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)
Date modified: