Modulation of flat-band voltage on H-terminated silicon-on-insulator pseudo-metal-oxide-semiconductor field effect transistors by adsorption and reaction events

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DOIResolve DOI: http://doi.org/10.1063/1.3583559
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume109
Issue10
Article number104904
SubjectAccumulation modes; Accumulation threshold; Adsorption and reactions; Alkyl monolayers; Ambient atmosphere; Ambient conditions; Field-effect mobilities; Flat-band voltage; Gas-phase reactions; H-terminated surface; High vacuum; In-field; Molecular adsorption; N-channel devices; Reversible change; Sensing applications; Silicon on insulator; Adsorption; Field effect transistors; Monolayers; Semiconducting silicon; Semiconducting silicon compounds; Threshold voltage; Water vapor; Current voltage characteristics
AbstractAccumulation mode pseudo-MOSFETs formed on hydrogen terminated silicon-on-insulator (SOI-H) were used to probe molecular adsorption and reaction events. Current-voltage characteristics of such n-channel devices are found to be sensitive to the environment, with the accumulation threshold voltage, or flat-band voltage, exhibiting large reversible changes upon cycling between ambient atmosphere, high vacuum (≤10-5 Torr), and exposure to water and pyridine vapor at pressures in the Torr range. The field-effect mobility is found to be comparatively less affected through these transitions. Oxidation of the H-terminated surface in ambient conditions leads to irreversible shifts in both the flat-band voltage and the field-effect mobility. A photochemical gas phase reaction with decene is used to form a decyl monolayer on the SOI(100)-H surface. Formation of this monolayer is found to result in a relatively small shift of the threshold voltage and only a slight degradation of the field effect mobility, suggesting that alkyl monolayer dielectrics formed in this way could function as good passivating dielectrics in field effect sensing applications. © 2011 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Steacie Institute for Molecular Sciences (SIMS-ISSM)
Peer reviewedYes
NPARC number21271164
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Record identifierb5f29903-cb13-411e-9f88-a9b0e01e2233
Record created2014-03-24
Record modified2016-05-09
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