Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.84.115325
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TypeArticle
Journal titlePhysical Review B - Condensed Matter and Materials Physics
ISSN1098-0121
Volume84
Issue11
Article number115325
AbstractA time-resolved microphotoluminescence study is presented for quantum dots that are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching [second-order correlation value of g (2 )(0)=0.16] and a biexciton-exciton emission cascade prove nonclassical emission from the dots and confirm their potential as single-photon sources. © 2011 American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271209
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Record identifierb6744970-4399-40a2-8db9-4ac4b5ec0a4e
Record created2014-03-24
Record modified2016-05-09
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