InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE

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DOIResolve DOI: http://doi.org/10.1116/1.3665223
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN1071-1023
Volume30
Issue2
Article number02B102
SubjectBlue laser diodes; GaN substrate; Growth technologies; High-nitrogen; InGaN laser diodes; InGaN quantum wells; Light loss; Plasma assisted molecular beam epitaxy; RF plasma; Single quantum well; Threading dislocation densities; Vacuum applications; Gallium nitride
AbstractThis work demonstrates the first true blue laser diodes (LDs) grown by plasma assisted molecular beam epitaxy that operate at the region of 450-460 nm. The single quantum well LDs were grown on several types of c-plane bulk GaN substrates, with threading dislocation densities varying from 10 4 to 10 8cm -2. The key factors that allowed the authors to achieve lasing in true-blue wavelengths are improvements in the growth technology of the InGaN quantum wells attributed to the high nitrogen flux used and the design of the LD structure, which reduced the light losses in the cavity. The authors discuss the influence of the diodes' design on the parameters of LDs. © 2012 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269316
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Record identifierb7cbc727-caae-4321-ad01-288b02cccbdc
Record created2013-12-12
Record modified2016-05-09
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