Defects generated by Fowler--Nordheim injection in silicon dioxide films produced by plasma-enhanced chemical-vapour deposition with nitrous oxide and silane

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DOIResolve DOI: http://doi.org/10.1063/1.360762
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TypeArticle
Journal titleJournal of Applied Physics
Volume78
Issue3
Pages18181823; # of pages: 6
SubjectCVD; DEFECTS; ELECTRIC CONDUCTIVITY; INTERFACE STATES; NITRIDATION; PHOTOELECTRON SPECTROSCOPY; PLASMA; SILICON OXIDES; THIN FILMS
AbstractHigh quality silicon dioxide films have been produced using a direct plasma-enhanced chemical vapour deposition process with silane, nitrous oxide and helium that leaves a nitrided layer at the Si-SiO2 interface. X-ray photoelectron spectroscopy coupled with etch-back of the films has shown that the interface nitrogen is incorporated by nitridation of the silicon surface. Fowler�Nordheim injection measurements on thin films annealed after deposition for 1 minute at 950 �C show that the neutral-trap generation and interface state generation rates are comparable to that of thermal oxide if a proper deposition power is chosen. The data is consistent with an interpretation in which fast donor states, not Pb centres, account for almost all of the increase in the charge trapped at the interface. Too high deposition powers lead to excessive nitrogen and higher interface state generation rates. It is proposed that improved performance under hot-electron stress could be obtained by using an optimal deposition power to obtain an optimal nitrogen concentration followed by annealing in oxygen.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328918
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Record identifierb84ffbbb-d531-4fe0-b395-8c09bbf1534c
Record created2009-09-10
Record modified2017-03-23
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