Attenuation and velocity of 56 GHz longitudinal phonons in gallium arsenide from 50 to 300 K

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DOIResolve DOI: http://doi.org/10.1080/01418639408240242
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TypeArticle
Journal titlePhilosophical Magazine Part B: Physics Of Condensed Matter, Structural, Electronic, Optical, And Magnetic Properties
Volume70
Issue3
Pages687698; # of pages: 12
AbstractWe have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon-phonon interaction.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337703
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Record identifierb8bcb830-47ec-470b-ac40-b219192db6e0
Record created2009-09-10
Record modified2016-05-09
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