Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1116/1.3590932
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TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN1071-1023
Volume29
Issue3
Article number03C136
SubjectGallium flux; Growth mechanisms; Miscut angle; Nitrogen fluxes; Phenomenological models; Plasma assisted molecular beam epitaxy; Epitaxial growth; Gallium; Gallium alloys; Gallium compounds; Indium; Molecular beam epitaxy; Molecular beams
AbstractIn this article, the authors discuss the mechanism of InGaN growth by plasma assisted molecular beam epitaxy. They present the evidence of the influence of substrate miscut on indium incorporation for the growths with different gallium fluxes. They propose and discuss the phenomenological model which describes the incorporation of indium into InGaN layers grown under the indium-rich conditions that takes into account following parameters: gallium and nitrogen fluxes, miscut angle, and the growth temperature. © 2011 American Vacuum Society.
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LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271124
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Record identifierb8c2fa5f-3ac7-49c7-98f4-6685009f31a6
Record created2014-03-24
Record modified2016-05-09
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