Selectively varying the number of active quantum wells in integrated devices using only one growth step

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DOIResolve DOI: http://doi.org/10.1117/12.206336
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TypeArticle
Proceedings titleCircular-grating light-emitting sources
Series titleProceedings of SPIE; Volume 2398
ConferenceCircular-grating light-emitting sources, San Jose, California, USA, February 6, 1995
ISSN0277-786X
ISBN0819417505
Pages105
AbstractThe phenomenon of indium migration off the sidewalls of features on patterned GaAs substrates during MBE growth has been studied. The level of migration depends strongly on the arsenic flux and the growth temperature. Modulating the arsenic flux during the growth of multilayer structures allows the number of active quantum wells to vary from one region of a device to another.
Publication date
PublisherSPIE--the International Society for Optical Engineering
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12337959
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Record identifierb937120b-7784-4964-9461-e1a49c778a58
Record created2009-09-10
Record modified2017-09-13
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