Interfaces in Si/Ge atomic layer superlattices on (001)Si: effect of growth temperature and wafer misorientation

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DOIResolve DOI: http://doi.org/10.1063/1.363013
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TypeArticle
Journal titleJournal Of Applied Physics
Volume80
Issue3
Pages14501459; # of pages: 10
Subjectfilm growth; germanium; interface structure; molecular beam epitaxy; raman spectra; silicon; superlattices; temperature dependence; xrd
AbstractWe have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150–650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2–0.3 nm in the 300–590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ∼0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30–40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ∼460 °C and peaks at ∼520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327461
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Record identifierb9be5d4b-41dd-44c0-b93b-55c53dc8e8e2
Record created2009-09-10
Record modified2016-05-09
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