The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis

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DOIResolve DOI: http://doi.org/10.1063/1.4772643
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume113
Issue1
Article number13704
SubjectAnti-localization effects; Gate voltages; High mobility; High-electron-density; Interband coupling; Magneto-transport measurement; P-type; Rashba effects; Rashba spin orbit interaction; Rashba spin splitting; Weak antilocalization; Carrier concentration; Electron density measurement; Electron gas; Inversion layers
AbstractThe Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd 0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (∼3.0-6.0 × 1015 m-2), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system. © 2013 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Measurement Science and Standards
Peer reviewedYes
NPARC number21269890
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Record identifierbacfa18b-eae6-47e1-848b-64cfb7ec023f
Record created2013-12-13
Record modified2016-05-09
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