Compositional Redistribution in Coherent Si1-xGex Islands on Si(100)

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DOIResolve DOI: http://doi.org/10.1109/TNANO.2007.891818
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TypeArticle
Journal titleIEEE Transactions on Nanotechnology
Volume6
Issue2
Pages245249; # of pages: 5
SubjectAlloy; coherent growth; dots; Ge; islands; Raman spectroscopy; Si; strain; transmission electron microscopy; X-ray diffraction
AbstractCoherent Si1-x Gex island growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations in the range 0.37 <= x <=0.56. A combined transmission electron microscopy, X-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to minimize the strain energy, while maintaining epitaxial growth, and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744869
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Record identifierbbeab85a-01c8-4fcc-a085-913cf7e83e6e
Record created2009-10-27
Record modified2016-05-09
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