High-Gain, Low Turn-on Voltage AlGaAs/GaAsNSb/GaAs HBTs Grown by Molecular Beam Epitaxy

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DOIResolve DOI: http://doi.org/10.1109/LED.2007.910000
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume28
Issue12
Pages1083
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744623
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Record identifierbd02af3c-a4dd-41a4-aa5d-98311fe29ff7
Record created2009-10-27
Record modified2016-05-09
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