Composition modulations in tensile strained In1-xGxAsyP1-y films grown on (1 0 0 ) InP substrates

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DOIResolve DOI: http://doi.org/10.1016/S0022-0248(01)01574-3
AuthorSearch for: ; Search for:
TypeArticle
Journal titleJournal of Crystal Growth
Volume233
Issue1
Pages8898; # of pages: 11
AbstractThe correlation between compositional modulations and surface morphology has been studied by transmission electron microscopy (TEM) and atomic force microscopy (AFM) for a series of tensile strained In1-xGaxAsyP1-y films grown by molecular beam epitaxy (MBE) on (100) InP substrates. At low values of strain (0.6%), both a quarternary In0.65Ga0.35As0.6P0.4 film and ternary In0.45Ga0.55As film show anisotropic behavior (both with regards to composition modulation and surface morphology) between [011] abd [01-1] cross-sections. The composition modulation and surface undulation are prominent only in the [01-1] cross-section. The In0.45Ga0.55As films develop a coarse faceted structure on (411) and 4-11- planes after ~100nm of film growth. Composition modulations (scaling with the size of the facets) are observed in films 0.1-1μm thick, but in thicker films (>1μm) the faceted structure disappears while the scale of the compositional modulations decays to that found in unstrained films. On the other hand 2% tensile strained In0.25Ga0.75As and In0.72Ga0.28P films show pronounced faceting with no evidence for compositional modulations, and 2% tensile strained In0.5Ga0.5As0.5P0.5 films show composition modulation without scaling and no faceted surface. The results are discussed in terms of the interplay bewtween thermodynamic driving force, leading to segregation and faceting, and kinetic factors.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744459
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Record identifierbd1e3be3-927a-4047-bffb-2f9f86176647
Record created2009-10-27
Record modified2016-05-09
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