Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

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DOIResolve DOI: http://doi.org/10.1063/1.3698303
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TypeArticle
Journal titleJournal of Applied Physics
Volume111
Issue6
Article number064318
Pages064318-1064318-3
AbstractWe find fatigue of low temperature photoluminescence (PL) in Si/SiGe three-dimensional island morphology nanostructures under continuous excitation. Initially, the PL intensity slowly decreases by less than 15%, and after ~10 min it decreases rapidly by more than 80%. After the PL intensity stabilizes, a complete recovery requires heating the sample to nearly room temperature. We propose that accumulation of charge within SiGe islands is responsible for the enhancement of Auger recombination and hence the observed PL fatigue.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number19727288
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Record identifierbd979c04-4889-4bf4-a095-1179278424e6
Record created2012-04-13
Record modified2016-05-09
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