Re-entrant metal-insulator transitions in Si-SiGe-Si heterostructures

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DOIResolve DOI: http://doi.org/10.1016/0039-6028(96)00569-9
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TypeArticle
Journal titleSurface Science
ISSN0039-6028
Volume361-362
Issue1-3
Pages937940; # of pages: 4
SubjectElectrical transport; Electrical transport measurements; Magnetic phenomena; Quantum effects; Quantum wells; Semiconductor-semiconductor heterostructures; Silicon-germanium
AbstractWe have studied the low-temperature transport properties of p-type Si/Si0.87Ge0.13/Si modulation doped heterostructures as a fimction of SiGe well width. We have observed re-entrant metal-insulator transitions in the quantum Hall effect regime at half-filled Landau levels. We report on the non-linear current-voltage characteristics and the thermal activation of the diagonal resistivity associated with these transitions. We have also studied the temperature dependence of the resistivity at zero magnetic field as a function of well width and present evidence for a metal-insulator transition.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328219
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Record identifierbe525812-472d-4350-b273-e868ad09f39c
Record created2009-09-10
Record modified2016-05-09
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