Five-band bias-selectable integrated quantum well detector in an n-p-n architecture

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DOIResolve DOI: http://doi.org/10.1063/1.3524236
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TypeArticle
Journal titleApplied Physics Letters
Volume97
Issue231102
Pages13; # of pages: 3
AbstractA detector with five bands covering visible to long-wave infrared is demonstrated using a GaAs-based n-p-n-architecture. The major elements are two back-to-back connected p-i-n photodiodes with InGaAs/GaAs and GaAs/AlGaAs-based quantum wells integrated within the n-regions. At 80 K, a preliminary detector shows two combinations of bands, each responding in three bands, covering the 0.6–0.8, 3–4, and 4–8 um ranges and the 0.8–0.9, 0.9–1.0, and 9–13 um ranges. A good selection of these two combinations based on the bias voltage polarity is observed. A similar four-band detector without any cross-talk between the bands is proposed using In0.53Ga0.47As/InP material system.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17379824
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Record identifierbe7e1fe2-db5e-439b-84de-a903413a09be
Record created2011-03-23
Record modified2016-05-09
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