Effects of grown-in defects on interdiffusion dynamics in InAs/InP(001) quantum dots subjected to rapid thermal annealing

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DOIResolve DOI: http://doi.org/10.1063/1.2905317
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TypeArticle
Journal titleJournal of Applied Physics
Volume103
Issue8
Pages83526
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; Executive Offices
Peer reviewedNo
NPARC number12744861
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Record identifierbed72c14-5b62-470f-baa4-1ee0cf59b217
Record created2009-10-27
Record modified2016-05-09
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