Atomic size mismatch strain induced reversed ADF-STEM image contrast between dilute semiconductor heteroepitaxial layers and substrates

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Proceedings titleMaterial Research Society Symposium Proceedings
ConferenceMaterials Research Society Symposium
Pages2631; # of pages: 5
AbstractThe annular dark field (ADF) image contrast of heteroepitaxial dilute nitride GaNxAs1-x (x =0.029 and 0.045) layers on GaAs and dilute carbide Si1-yCy (y <= 0.015) layers on Si were studied with a scanning transmission electron microscope (STEM). Contradictory to the compositional contrast prediction of ADF-STEM image intensity, the lower average atomic number heteroepitaxial strained layers GaNxAs1-x and Si1-yCy are brighter than the higher average atomic number Si and GaAs substrates for ADF detector semiangle up to 92 mrad. This reversed contrast is due to the localized strain resulting from the difference in atomic size between the substitutional atoms (N, C) and host atoms (GaAs, Si). The application of the reversed ADF-STEM image contrast is discussed in relation to the evaluation of very small amount of substitutional atom compositions in dilute systems.
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17160665
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Record identifierbfc2045a-8064-4105-b867-47ae50e77c50
Record created2011-03-26
Record modified2016-05-09
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