Plasma-assisted MBE growth of GaN on GaN/sahire templates grown in situ by ammonia- MBE

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TypeArticle
Proceedings titleState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V
Conference206th Meeting of the Electrochemical Society, 3-8 October 2004, Honolulu, Hawaii, USA
ISBN1-56677-419-5
Volume2004
Issue6
Pages215226; # of pages: 12
Publication date
PublisherThe Electrochemical Society
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
NoteFifth Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and 41st State-of-the-Art Program on Compound Semiconductors Symposia
Peer reviewedYes
NPARC number12346299
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Record identifierbff2ccf7-7e9d-4168-be30-502c8a8f8e47
Record created2009-09-17
Record modified2016-05-09
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