Photoluminescence transient-decay study of the deep-donor bound-exciton-emission band in high-purity InP

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.53.3627
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TypeArticle
Journal titlePhysical Review B: condensed matter and materials physics
Volume53
Issue7
Pages36273629; # of pages: 3
AbstractA detailed time-resolved photoluminescence study of the deep-donor bound-exciton-emission band frequently observed below the acceptor bound-exciton transition, in high-purity n-type InP grown by chemical-beam epitaxy, has been performed. The decay lifetimes across the broad emission band increase with increasing exciton localization energy. A theory developed by Rashba and Gurgenishvili [Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962)] [Sov. Phys. Solid State 4, 759 (1962)] which predicts a three-halves dependence of the exciton-localization energy on the bound-exciton lifetimes has been observed in InP.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327740
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Record identifierc08da2df-c78c-453d-9236-9a7e33f95540
Record created2009-09-10
Record modified2016-05-09
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