Insights into semiconductor nanowire conductivity using electrodeposition

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/27/10/105020
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TypeArticle
Journal titleSemiconductor Science and Technology
ISSN0268-1242
Volume27
Issue10
Article number105020
SubjectCore-shell; Depletion layer; Electrical contacts; GaAs; Gold catalysts; InAs; Metal growth; Nucleation and growth; P-type GaAs; Semiconductor nanowire; Catalysts; Electrodeposition; Gold; Indium arsenide; Nanowires; Semiconducting gallium; Gallium arsenide
AbstractCopper (Cu) and iron (Fe) electrical contacts to gallium arsenide (GaAs) and indium arsenide (InAs) nanowires (NWs) have been fabricated via electrodeposition. For undoped or low carbon-doped (10 17/cm 3), p-type GaAs NWs, Cu or Fe nucleate and grow only on the gold catalyst at the NW tip, avoiding the sidewalls. Metal growth is limited by the Au contact resistance due to thick sidewall depletion layers. For InAs NWs and heavier-doped, core-shell (undoped core-C-doped shell) GaAs NWs, metal nucleation and growth occurs on the sidewalls as well as on the gold catalyst limited now by the ion electrolyte diffusivity. © 2012 IOP Publishing Ltd.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269402
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Record identifierc0cfd275-6136-42e6-8f4a-7d6afd483cbc
Record created2013-12-12
Record modified2016-05-09
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