Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors

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DOIResolve DOI: http://doi.org/10.1063/1.118320
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TypeArticle
Journal titleApplied Physics Letters
Volume70
Issue4
Pages414416; # of pages: 3
Subjectaluminium compounds; gallium arsenide; infrared detectors; photoconductivity; photodetectors; photoexcitation; semiconductor quantum wells
AbstractNonlinear photoconductivity effects at high excitation power in quantum well infrared photodetectors (QWIPs) are studied both experimentally and theoretically. The photoconductivity nonlinearity is mainly caused by a redistribution of the electric potential at high power, which leads to a decrease of electric field in the bulk of the QWIP. As a result of the decreased field, the photoexcited electron escape probability and drift velocity decrease resulting in a decrease of responsivity.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12339196
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Record identifierc10251f2-fad9-4f0c-b5b4-32ab393247ac
Record created2009-09-11
Record modified2016-05-09
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