Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [C2H52N]4Hf with NO and O2

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TypeArticle
ConferenceMat Res Soc Sym, Spring MRS Meeting, April 2004, San Francisco
Volume811
PagesD721
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346479
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Record identifierc11b9dcd-64d1-4c42-b2fe-a8673f1a52d8
Record created2009-09-17
Record modified2016-05-09
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