Highly sensitive electrical detection of TCNE on chemically passivated silicon-on-insulator

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DOIResolve DOI: http://doi.org/10.1039/c1cc12504d
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TypeArticle
Journal titleChemical Communications
ISSN1359-7345
Volume47
Issue38
Pages1059310595; # of pages: 3
Subjecthydrogen; silicon; tetracyanoethylene; binding affinity; covalent bond; electric current; electrochemical detection; monitor; sensitivity analysis; silicon on insulator; surface property; temperature dependence
AbstractAdsorption of tetracyanoethylene (TCNE) onto hydrogen terminated, n-type silicon-on-insulator is shown to cause significant depletion of majority carriers. Employing an ambient pseudo-MOSFET, ppm levels of TCNE vapour rapidly decrease the n-channel saturation current by at least two orders of magnitude. Covalent passivation with a decyl monolayer improves the reversibility of the response while only slightly decreasing the sensitivity. © 2011 The Royal Society of Chemistry.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Steacie Institute for Molecular Sciences
Peer reviewedYes
NPARC number21271965
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Record identifierc1fad62d-2f61-4d9b-92cc-68c5861515a4
Record created2014-05-14
Record modified2016-05-09
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