3D GOI CMOSFETs with Novel IrO2(Hf) Dual Gates and High-k Dielectric on 1P6M-0.18μm-CMOS

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DOIResolve DOI: http://doi.org/10.1109/IEDM.2004.1419101
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TypeArticle
Journal titleIEEE International IEDM Technical Digest
Pages181184; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for Biological Sciences
Peer reviewedNo
NPARC number12744062
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Record identifierc2e3b6d2-adaf-4a6f-8c55-f08f3f07aa34
Record created2009-10-27
Record modified2016-05-09
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