Properties of 1.3 µm InGaNAs Laser Material Grown by MBE Using an N2/Ar RF Plasma

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DOIResolve DOI: http://doi.org/10.1016/S0038-1101(02)00379-9
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TypeArticle
Journal titleSolid State Electronics
Volume47
Issue3
Pages399405; # of pages: 7
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; National Institute for Nanotechnology
Peer reviewedNo
NPARC number12743931
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Record identifierc33b3e37-9e34-4f48-a116-8350053e3988
Record created2009-10-27
Record modified2016-05-09
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