Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications

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DOIResolve DOI: http://doi.org/10.1049/el:19970015
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TypeArticle
Journal titleElectronics Letters
Volume33
Issue1
Pages8586; # of pages: 2
Subject10 Gbit/s; 18 GHz; 50 GHz; 70 GHz; CBE regrowth; decision circuit; dynamic frequency divider; extrinsic base layers; high speed integrated circuits; InGaP-GaAs; lightwave communications; OEIC; optoelectronic circuit applications; planar InGaP/GaAs HBTs; selective chemical beam epitaxial; self-aligned HBT fabrication process; subcollector layers
AbstractA fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE) regrowth of both the extrinsic base and subcollector layers is reported. Using this technology, cutoff frequencies of 50 and 70 GHz for fT and fmax, respectively, have been achieved for In0.49Ga0.51P/GaAs HBTs with 9 � 4 �m2 emitter-base junction area. High speed integrated circuits for lightwave communications including a 10 Gbit/s decision circuit and an 18 GHz dynamic frequency divider were successfully fabricated using these planar HBTs.
Publication date
LanguageEnglish
Peer reviewedNo
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This is a non-NRC publication

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NPARC number12327756
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Record identifierc3cecfd3-7112-41eb-b245-515d4b7716d7
Record created2009-09-10
Record modified2016-05-09
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