Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

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DOIResolve DOI: http://doi.org/10.1063/1.4832460
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume103
Issue21
Article number212403
AbstractWe report on a highly polarized emission from InGaAs/GaAs-quantum well light-emitting diodes in which we inject spin-polarized electrons from an Fe/Schottky contact. The emission spectra consist of the e1h 1 free exciton (FX) and a feature 12 meV below FX attributed to band-to-band (BB) recombination. The FX exhibits a maximum circular polarization of 22%, with a magnetic-field dependence characteristic of spin injection from Fe. The BB emission on the other hand exhibits a polarization that is strongly bias and temperature dependent, with intriguing magnetic-field dependence: The polarization exhibits a maximum of 78% at 2.5 T and 2 K, then decreases linearly with field and reaches -78% at 7 T, attributed to magnetic-field dependent spin relaxation in the presence of excess electrons.
Publication date
LanguageEnglish
AffiliationSecurity and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270366
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Record identifierc6a0ca30-4733-4101-a5b5-40e1852c4c04
Record created2014-02-05
Record modified2016-05-09
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