Composition of AlGaAs

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Journal titleJournal of Applied Physics
Pages16831694; # of pages: 12
Subjectaluminium compounds; calibration; gallium arsenide; III-V semiconductors; lattice constants; molecular beam epitaxial growth; photoluminescence; Raman spectra; semiconductor epitaxial layers; X-ray diffraction
AbstractAlthough the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray diffraction, photoluminescence, and Raman spectroscopy to determine the compositional variations of the measured physical parameters. The phenomenological equations derived from these measurements can now be used to establish the Al content of unknown alloys with confidence. In addition, the results show that Vegard’s law does not hold for the variation of the AlxGa1−xAs lattice constant with x. The small quadratic term has very important implications for a correct analysis of x-ray results.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327948
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Record identifierc6b111c6-464b-4cb2-8edc-7b909f2497c9
Record created2009-09-10
Record modified2016-05-09
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