Planar and maskless selective growth of AlGaN/GaN HEMT structures on Si111 substrates by ammonia molecular beam epitaxy

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TypeArticle
ConferenceThe 31th Workshop on Compound Semiconductor Devices and Integrated Circuits, 2007
Pages281284; # of pages: 4
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346546
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Record identifierc6e388d7-fd9c-4f5a-a1ad-330fa72520f5
Record created2009-09-17
Record modified2016-05-09
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