Two-step epitaxial lateral overgrowth of GaN

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DOIResolve DOI: http://doi.org/10.1016/S0254-0584(03)00228-1
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleMaterials Chemistry and Physics
Volume82
Issue1
Pages5560; # of pages: 6
SubjectEpitaxial lateral overgrowth (ELO); Etch pits density (EPD); GaN; Metalorganic vapor phase epitaxy (MOVPE)
AbstractA two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520??C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along direction, it was found that an 8?min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480?nm and an etch pits density (EPD) of 1.6?107?cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample.
Publication date
AffiliationNational Research Council Canada; NRC Genomics and Health Initiative; NRC Institute for Microstructural Sciences; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12338178
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Record identifierc722dcce-ca11-44d9-87da-119c1c0a6e07
Record created2009-09-10
Record modified2016-05-09
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