Deposition of iridium thin films using new IrI CVD precursors

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DOIResolve DOI: http://doi.org/10.1002/1521-3862(20020116)8:1<17::AID-CVDE17>3.0.CO;2-3
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TypeArticle
Journal titleChemical Vapor Deposition
Volume8
Issue1
Pages1720; # of pages: 4
Subject1,5-Cyclooctadiene; Aminoalkoxide; Hexafluorodiacetone; Imine; Iridium; Ketoiminate; Nobel metals
AbstractThe syntheses of three volatile IrI cyclooctadiene precursors is described. The anionic ligand was carefully selected to produce a structure (see Figure) with physical properties suitable for CVD requirements. Films grown using oxygen as carrier gas produced iridium thin films with a purity higher than 98 % and a measured resistivity in the range of 8.4 to 10.2 μΩ cm.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12329219
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Record identifierc738aca7-bdf4-453d-981c-fb7c9965bef6
Record created2009-09-10
Record modified2016-05-09
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