Exciton dynamics and spin-flip in tensile strained quantum wells

DOIResolve DOI: http://doi.org/10.1016/0038-1101(95)00354-1
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TypeArticle
Proceedings titleSolid-State Electronics
ConferenceSeventh International Conference on Modulated Semiconductor Structures, 10–14 July 1995, Madrid, Spain
Volume40
Issue1-8
Pages737740; # of pages: 4
AbstractWe have studied the exciton dynamics and spin-flip processes in tensile strained GaAs1-yPy/Ga0.65Al0.35 As quantum wells as a function of phosphorous composition and well width. The strain introduced by the presence of phosphorous modifies the valence band structure. This strongly affects the characteristic times of exciton formation and polarization decay. However, the recombination time is essentially determined by the light- or heavy-character of the excitonic ground state.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327782
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Record identifierc7603e9a-3a81-4c08-aac1-9c57d7295e3f
Record created2009-09-10
Record modified2016-05-09
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