Low-temperature low-stress silicon-nitride for optoelectronic applications prepared by electron cyclotron resonance plasma chemical-vapor deposition

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DOIResolve DOI: http://doi.org/10.1557/PROC-446-151
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TypeArticle
Proceedings title1996 MRS Fall Meeting - Amorphous and Crystalline Insulating Thin Films–1996
Series titleMaterials Research Society Symposia Proceedings; no. 446
Conference1996 MRS Fall Meeting: Amorphous and Crystalline Insulating Thin Films, December 2-4, 1996, Boston, Massachusetts, U.S.A.
ISSN0272-9172
ISBN1558993509
9781558993501
Pages151
AbstractSilicon nitride films have been deposited with a single-magnet electron-resonance deposition system using nitrogen and silane as the reaction gases at substrate temperatures of 110°C and 300°C. The films are slightly nitrogen-rich with no measurable Si-H bonds measurable by Fourier Transform infrared spectroscopy and the concentration of hydrogen present as N-H bonds increases with increasing SiH4/N2. The stress levels in the films can be controlled from tensile to compressive by decreasing the SiH4/N2 flow ratio and very low stress can be obtained with N-H bond concentrations of 4 at. %. The optical bandgap for the layer with the lowest stress value (-11.5 MPa), deposited at 300°C was 4.9 eV, as determined from a taue plot, and the waveguide loss at 632.8 nm was 2.3 dB/cm for 500 nm thick film deposited on fused silica.
Publication date
PublisherCambridge University Press
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328797
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Record identifierc769d491-f0c1-461a-a485-eb70ed3cfa06
Record created2009-09-10
Record modified2016-05-09
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