Determination of elastic strains in epitaxial layers by HREM

Download
  1. Get@NRC: Determination of elastic strains in epitaxial layers by HREM (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1016/0304-3991(94)00200-7
AuthorSearch for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleUltramicroscopy
Volume58
Issue2
Pages175184; # of pages: 10
AbstractA new technique is presented to directly measure strains in epitaxial systems from high-resolution electron microscope (HREM) images. This method involves the calculation of the cumulative sum (CUSUM) of deviations from an average lattice fringe spacing value. Even when the variation in individual lattice fringe spacings is large compared to the difference in fringe spacing due to strain, the CUSUM method is capable of providing reliable strain determinations. The CUSUM approach was applied to three samples of semiconductor In 1−xAlxSb/InSb (0≤x≤0.5) bilayer and superlattice systems in [11¯0] zone-axis projection. It was found that the epitaxial strains obtained from the HREM CUSUM method agreed with the bulk X-ray diffraction values when the sample thicknesses were on the order of 80–100 nm. Thinner specimens, on the order of 10–20 nm, displayed significant surface relaxation effects.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328914
Export citationExport as RIS
Report a correctionReport a correction
Record identifierc7d60a7f-7b50-4b75-ab54-3282324b40c9
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)