Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixing

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DOIResolve DOI: http://doi.org/10.1063/1.117787
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TypeArticle
Journal titleApplied Physics Letters
Volume69
Issue4
Pages562564; # of pages: 3
SubjectAMPLIFIERS; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTEGRATED OPTICS; ION IMPLANTATION; PHOSPHORUS IONS; QUANTUM WELLS; SEMICONDUCTOR LASERS
AbstractA polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple quantum well (MQW) laser structure operating at 1.5 �m has been fabricated through vacancy enhanced quantum well intermixing using broad area, high energy (1 MeV P + ) ion implantation. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, bringing the two bands together. Current�voltage measurements indicate that junction characteristics are well maintained after implantation. This simple technique for fabricating polarization insensitive optical amplifiers is readily extended to the monolithical integration of such devices along with other passive and active optoelectronic devices and opens the door to practical photonic integrated circuits.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12339192
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Record identifierc8125e39-342d-40ef-8050-96810862bb00
Record created2009-09-11
Record modified2016-05-09
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