Interband transitions in AlxGa1-xAs/AlAs quantum-well structures

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.53.12912
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TypeArticle
Journal titlePhys. Rev. B
Physical Review B
Volume53
Issue19
Pages12912–; # of pages: 1
AbstractWe have studied the interband transitions from undoped and modulation-doped Al0.25Ga0.75As/AlAs multiple-quantum-well structures (the latter were doped n type in the Al0.25Ga0.75As layers). Two types of transitions have been observed: Type I associated with electron-hole recombination in the Al0.25Ga0.75As layers and type II between electrons in the Xxy and Xz valleys of the AlAs layers and holes confined in the Al0.25Ga0.75As layers. In undoped samples the luminescence associated with type-II transitions is dominated by phonon replicas. In contrast, the intensities of the zero-phonon Xxyh1 and Xzh1 transitions in modulation-doped samples are comparable to those of the replicas. Under optical pumping the type-II transitions in undoped samples show a pronounced blueshift due to band bending. Under high pumping intensity, the spectra from the undoped samples strongly resemble those from the modulation-doped structures. © 1996 The American Physical Society.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328531
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Record identifierc83eecb4-147e-48db-9be6-527f6076f473
Record created2009-09-10
Record modified2016-05-09
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