Axial resistivity measurement of a nanopillar ensemble using a cross-bridge Kelvin architecture

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DOIResolve DOI: http://doi.org/10.1116/1.4794182
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TypeArticle
Journal titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
ISSN0734-2101
Volume31
Issue3
Article number31502
SubjectCross-bridge kelvin resistors; Direct measurement; Electronic performance; Four-point probe techniques; Glancing Angle Deposition; Indium tin oxide; Longitudinal axis; Resistivity measurement; Deposits; Electric properties; Thin films; Tin oxides; Vapor deposition; Nanostructures
AbstractAchieving the full potential of nanopillar electrode based devices, such as next-generation solar cells, catalyst supports, and sensors, requires axial resistivity measurements to optimize electronic performance. Here, the authors demonstrate a technique for direct measurement of the ensemble electrical properties of nanopillar thin films along the structures longitudinal axis. A cross-bridge Kelvin resistor architecture is adapted to accommodate an indium tin oxide (ITO) nanopillar thin film fabricated by glancing angle deposition (GLAD). As-deposited GLAD ITO nanopillars were found to have a measured resistivity of (1.1 ± 0.3) × 10-² Ω cm using our technique. Planar ITO films deposited at near normal incidence were found to have a resistivity of (4.5 ± 0.5) × 10-³ Ω cm, determined by the standard four-point-probe technique. These measurements demonstrate the viability of this modified technique for nanopillar characterization, and identify experimental limitations related to device size and edge defects. © 2013 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21271818
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Record identifierc864413d-2341-4e52-9245-11ee9d4fd91b
Record created2014-04-22
Record modified2016-05-09
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