Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

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DOIResolve DOI: http://doi.org/10.1063/1.3514896
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Journal titleJournal of Chemical Physics
Article number64712
SubjectBond structures; Chemical method; Coulomb repulsions; Doped silicon; Electronic behaviors; Extended Hubbard model; Filling behavior; Good correlations; Hydrogen-terminated silicon surfaces; Net charges; Quantum Dot; Si(1 0 0); Theoretical result; Tunnel coupling; Hydrogen; Hydrogen bonds; Dangling bonds; hydrogen; quantum dot; silicon; article; chemical structure; chemistry; surface property; Hydrogen; Molecular Structure; Quantum Dots; Silicon; Surface Properties
AbstractWe study both experimentally and theoretically the electronic behavior of dangling bonds (DBs) at a hydrogen terminated Si(100)-2×1 surface. Dangling bonds behave as quantum dots and, depending on their separation, can be tunnel coupled with each other or completely isolated. On n-type highly doped silicon, the latter have a net charge of -1e, while coupled DBs exhibit altered but predictable filling behavior derived from an interplay between interdot tunneling and Coulomb repulsion. We found good correlation between many scanning tunneling micrographs of dangling bond structures and our theoretical results of a corresponding extended Hubbard model. We also demonstrated chemical methods to prevent tunnel coupling and isolate charge on a single dangling bond. © 2011 American Institute of Physics.
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AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21271348
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Record identifierc93457d3-db98-4723-812f-049320267a92
Record created2014-03-24
Record modified2016-05-09
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