Effect of an in-plane magnetic field on microwave photoresistance and Shubnikov-de Haas effect in high-mobility GaAs/AlGaAs quantum wells

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DOIResolve DOI: http://doi.org/10.1088/1742-6596/456/1/012004
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TypeArticle
Proceedings titleJournal of Physics: Conference Series
Conference20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012, July 22-27, 2012, Chamonix Mont Blanc
ISSN1742-6588
Volume456
Issue1
Article number12004
SubjectGaAs/AlGaAs quantum well; High mobility; High tilt angle; In-plane magnetic fields; Microwave-induced resistance oscillations; Photoresistance; Quantum scattering; Shubnikov-de Haas oscillations; Electric resistance; Magnetic fields; Semiconductor quantum wells; Shubnikov-de Haas effect; Microwave oscillators
AbstractA recent study of the decay of microwave-induced resistance oscillations (MIRO) in GaAs/AlGaAs quantum wells due to an in-plane magnetic field B ∥ has revealed the dominant role of a quadratic-in-B ∥ correction to the quantum scattering rate. In the present study, we examine the evolution of Shubnikov-de Haas oscillations (SdHO) with increasing tilt angle in the same sample. Even though we find that the SdHO also diminish at high tilt angles, this decay is qualitatively different from that of MIRO, possibly indicating a different physical origin.
Publication date
LanguageEnglish
AffiliationSecurity and Disruptive Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21270513
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Record identifierc9a4b717-dff0-4559-8d84-0ba57fff9e5e
Record created2014-02-14
Record modified2016-05-09
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