Transparency of band-gap-shifted InGaAsP/InP quantum-well waveguides

Download
  1. Get@NRC: Transparency of band-gap-shifted InGaAsP/InP quantum-well waveguides (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1139/p96-827
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Proceedings titleProceedings of the Seventh Canadian Semiconductor Technology Conference : Ottawa, Ontario, Canada, August 14-18, 1995
Series titleCanadian Journal of Physics; Volume 74
ConferenceSeventh Canadian Semiconductor Technology Conference, Ottawa, Ontario, Canada, August 14-18, 1995
ISSN0008-4204
Pagess32s34; # of pages: 3
AbstractThe properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.
Publication date
LanguageEnglish
AffiliationNRC Industrial Research Assistance Program; NRC Institute for Aerospace Research; NRC Institute for Microstructural Sciences; National Research Council Canada; NRC Institute for National Measurement Standards
Peer reviewedNo
NPARC number12328853
Export citationExport as RIS
Report a correctionReport a correction
Record identifiercab223ec-59cd-48fd-beb8-19e2704cc21e
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)