Comparing High Mobility InGaAs FETs with Si and GOI Devices

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DOIResolve DOI: http://doi.org/10.1109/DRC.2006.305130
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TypeArticle
Journal title64th IEEE Device Research Conference
Pages8586; # of pages: 2
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12743824
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Record identifiercb98588e-1e63-4b6e-b4b6-fe479561e8e3
Record created2009-10-27
Record modified2016-05-09
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