Quantum-well intermixing for optoelectronic integration using high energy ion implantation

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DOIResolve DOI: http://doi.org/10.1063/1.359948
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TypeArticle
Journal titleJournal Of Applied Physics
Volume78
Issue6
Pages36973705; # of pages: 9
Subjectabsorption spectra; fabrication; gallium arsenides; heterostructures; indium arsenides; integrated optics; ion implantation; lasers; optoelectronic devices; photoluminescence; quantum wells
AbstractThe technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12333596
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Record identifiercbd67fca-bd55-4420-b172-9e84dfa6bff5
Record created2009-09-10
Record modified2016-05-09
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