Improved model for nanowire BioFETs on SOI operating in electrolyte

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Proceedings titleECS Transactions
ConferenceBioelectronics, Biointerfaces, and Biomedical Applications 4 - 219th ECS Meeting, 1 May 2011 through 6 May 2011, Montreal, QC
Pages1728; # of pages: 12
SubjectBioaffinity sensors; Device fabrications; Finite element codes; Gate insulator; Improved models; PH measurements; Protein attachment; Realistic model; Relative sensitivity; SOI substrates; Stern layer; Topdown; Electrolytes; Field effect transistors; Finite element method; Gene encoding; Medical applications; Nanowires; Computer simulation
AbstractUsing a readily available finite element code (Freefem++) the performance of nanowire (NW) field-effect transistors used as bioaffinity sensors has been simulated in 2D using realistic models for the semiconductor, gate insulator, Stern layer, and a layer of charged biomolecules (DNA) in electrolyte. The simulations are compared to those published previously for cylindrical NWs suspended in electrolyte. Calculations for Si NWs with circular and trapezoidal cross-section on SOI substrates are compared to assess the relative sensitivities for the devices made during the top-down (cylindrical) and bottom-up (trapezoidal) approach to device fabrication. It is shown that the performance of the trapezoidal structures could be superior, even when compared to cylinders with smaller dimensions. The simulations are compared to recent pH measurements with trapezoidal nanowires and pave the way to improved simulations for DNA and protein attachment. ©The Electrochemical Society.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271565
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Record identifiercc110ac8-8981-4d39-96b2-3b0e3b6922e5
Record created2014-03-24
Record modified2016-05-09
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