Time-resolved imaging of negative differential resistance on the atomic scale

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TypeArticle
Journal titleCondensed Matter: Mesoscale and Nanoscale Physics
Article numberarXiv:1608.06344
AbstractNegative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature.
Publication date
PublisherCornell University Library
Linkhttps://arxiv.org/abs/1608.06344
LanguageEnglish
AffiliationNational Research Council Canada; National Institute for Nanotechnology
Peer reviewedYes
NPARC number23000902
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Record identifiercca0cb31-8e84-4922-82fe-1f338152caa8
Record created2016-11-09
Record modified2017-03-23
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