Low-current optical switching by carrier injection induced reconfigurable waveguiding

AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
Proceedings titlePhotonics North 2004: Photonic Applications in Telecommunications, Sensors, Software, and Lasers
Series titleProceedings of SPIE; Volume 5579
ConferenceSPIE Photonics North SPIE, 2004
Pages644651; # of pages: 8
AbstractAn improved compact 1x2 digital optical switch (DOS) in InGaAsP/InP is studied, and the experimental results are compared to numerical modeling. We present measurements of Mach-Zehnder and DOS devices fabricated with InGaAsP cores having bandgap energies corresponding to wavelengths of 1.2 um, 1.3 um, and 1.4 um. The results are compared with modeling evaluation of refractive index change versus carrier concentration in the different InGaAsP alloys. The effects of modifications in the wafer layer structure are presented as well. Switching current is significantly reduced from greater than 100 mA to about 20 mA, resulting in significant power savings, and in addition eliminating thermal overshoot in the switched optical pulse. The DOS has a measured switching contrast ratio of better than 12 dB with a switching rise time of less than 10 nsec.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12346335
Export citationExport as RIS
Report a correctionReport a correction
Record identifierccedea04-c346-4011-bf5d-69940d5243ff
Record created2009-09-17
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)