Probing superlattices of silicon/silicon-germanium alloy with raman spectroscopy

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TypeArticle
Journal titlePhysics in Canada = La Physique du Canada
ISSN0031-9147
Volume43
Issue2
Pages7074
AbstractRaman scattering spectroscopy has been widely used to characterize the physical properties of semiconductors for at least 20 years. In Raman scattering experiments, monochromatic laser light is focused on the sample and the light scattered inelastically by excitations in the solid is collected and spectrum analyzed. The frequency shifts of the peaks in the Raman spectrum from the laser line position give the energies of the fundamental excitations, which may be electronic or vibrational. More recently, the technique has proved especially valuable for evaluating the mechanical and electronic properties of strained layer superlattices. In particular, for the Si/Sii_xGex system, Raman scattering has been used to evaluate the strain within the alloy and Si layers.
Publication date
PublisherCanadian Association of Physicists
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NPARC number23001480
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Record identifierce7698ad-c311-4a57-908e-191f039752c6
Record created2017-02-16
Record modified2017-03-17
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