Optimizing well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors

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DOIResolve DOI: http://doi.org/10.1063/1.371504
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TypeArticle
Journal titleJournal Of Applied Physics
Volume86
Issue9
Pages52325236; # of pages: 5
Subjectaluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; quantum well devices; semiconductor doping
AbstractEffects of well doping density on the performance of GaAs/AlGaAs p-type quantum well infrared photodetectors are systematically studied. We find that for devices covering the 3–5 µm wavelength region and operating at about 100 K, the optimum two-dimensional doping density is in the range 1–2×1012 cm–2, which maximizes the background limited infrared performance temperature and dark current limited detectivity. Increasing the doping density not only enhances the peak absorption but also broadens the linewidth pronouncedly.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12338479
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Record identifiercf701487-2abf-4583-882c-0cb80cca0bb2
Record created2009-09-10
Record modified2016-05-09
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