In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient ohmic contact formation

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DOIResolve DOI: http://doi.org/10.1063/1.1543233
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TypeArticle
Journal titleApplied Physics Letters
Volume82
Issue5
Pages736
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12333616
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Record identifiercf834be7-2a46-46dc-a9e8-fcfd6d704cad
Record created2009-09-10
Record modified2016-05-09
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