Current blocking in InP/InGaAs double heterostructure bipolar transistors

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DOIResolve DOI: http://doi.org/10.1063/1.361108
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TypeArticle
Journal titleJournal of Applied Physics
Volume79
Issue5
Pages27712778; # of pages: 8
SubjectBIPOLAR TRANSISTORS; CURRENT DENSITY; DIFFUSION LENGTH; FABRICATION; FERMI STATISTICS; GALLIUM ARSENIDES; HETEROSTRUCTURES; IMPURITIES; INDIUM ARSENIDES; INDIUM PHOSPHIDES
AbstractThe one-flux analysis of double-heterostructure bipolar transistors with composite collectors in the preceding article W. R. McKinnon, J. Appl. Phys. 79, 2762 (1996) is compared to drift-diffusion calculations and to measurements on InP/InGaAs/InP/composite collectors-double heterostructure bipolar transistors. For quantitative agreement we include the effects of ionized impurities in the space-charge regions, and an approximate treatment of Fermi舑Dirac statistics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12330781
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Record identifierd014c67a-1f39-4b67-81dd-1c8d173861f2
Record created2009-09-10
Record modified2016-05-09
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